• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A process for direct bonding between at least first and second substrates (100, 102), each of the first and second substrates having first and second major faces (104, 106, 108, 110), comprising at least the steps of: first thinning edges (114) of the first substrate (100) over at least a portion of the circumference of the first substrate, at the first major face (104) of the first substrate; contacting the second main face (106) of the first substrate with the second main face (110) of the second substrate (102) such that a bonding wave propagates between the first and second substrates, solidifying the first and second substrates to each other by direct bonding.
    公开号:FR3036223A1
    申请号:FR1554182
    申请日:2015-05-11
    公开日:2016-11-18
    发明作者:Frank Fournel；Christophe Morales；Hubert Moriceau；Francois Rieutord
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD AND PRIOR ART The invention relates to a process for direct bonding of two substrates to one another during which a thinning of the edges of at least one of the substrates. one of the two substrates is made to avoid the appearance of bonding defects at the edges of the substrates. The term "substrate" is understood to mean a plate or a wafer (for example a wafer), for example in semiconductor (generally made of silicon), having already or not already undergone technological steps of microelectronics forming, for example, electronic components. in the substrate. These technological steps in microelectronics are, for example, lithography, etching and deposition steps. Direct bonding, also known as "molecular bonding", or "wafer bonding" or "direct bonding" in English, is an assembly technique that makes it possible to join two surfaces by putting these two surfaces in direct contact without resorting to a bonding material (glue, wax, etc.). In this type of bonding, the adhesion is obtained thanks to the fact that the surfaces to be bonded are sufficiently smooth (typically with a roughness of the order of 0.5 nm), free of particles or contaminations, and sufficiently close together. one of the other to allow to initiate an intimate contact between them. In this case, the attractive forces between the two surfaces are high enough to cause molecular bonding of the two surfaces with each other. Molecular bonding is induced by all the attractive forces of electronic interaction between the atoms or molecules of the two materials to be bonded (Van der Waals forces). Heat treatments may be performed during or after bonding to increase the bonding energy between the bonded surfaces. Such direct bonding may correspond to a so-called "hydrophobic" bonding, for example between two monocrystalline silicon substrates without surface oxide and with surfaces passivated by Si-H bonds, for example. In this case, the direct bonding forms a crystalline "connection" between the bonded materials. Direct bonding may also correspond to a so-called "hydrophilic" bonding, for example between two substrates of oxidized silicon. In such a hydrophilic bonding, the silanol (Si-OH) bonds of surfaces and a film of water present between the two substrates make it possible to obtain stronger hydrogen bonding interactions than the Van der Waals forces obtained with the surfaces. Passivated hydrogen with Si-H bonds in the case of hydrophobic bonding. After contacting the two substrates to be glued to each other, a slight mechanical pressure is applied to the substrates to initiate direct bonding. This pressure makes it possible to bring the materials of the two substrates at a sufficiently small distance so that the attractive forces between the atoms or molecules of the two surfaces to be bonded can be established. A sticking wave then propagates from the point of pressure, generally at the centers of the substrates, over the entire extent of the surfaces, with the effect of closely bonding the two substrates. This operation is generally performed at room temperature and at ambient pressure. Thus, this bonding wave will, among other things, evacuate the air and a portion of the water present between the two surfaces just before its propagation. This evacuation generates an overpressure of about two atmospheres at the front of the bonding wave. When the bonding wave arrives at the edges of the substrates, adiabatic expansion occurs and may cause defects at the edges of the substrates, even if the surfaces of these edges are exactly the same as at the center of the substrates. Such defects may also appear later, for example during the implementation of heat treatments performed to increase the bonding energy between the substrates.
    [0002] These bonding defects due to the propagation of the bonding wave appear mainly during the implementation of a hydrophilic direct bonding because during such bonding, the bonding wave spreads faster than when a hydrophobic direct bonding. Overpressure is therefore more important, as is adiabatic expansion, in the case of direct hydrophilic bonding.
    [0003] However, such defects may potentially occur in hydrophobic direct bonding. To solve these problems, document EP 2 115 768 proposes to heat the substrates at least until they come into contact with each other. Alternatively, WO 2013/160841 proposes to solve these problems by bonding under a helium atmosphere. The solutions proposed in the documents cited above, however, require modifying certain properties of the atmosphere (temperature, pressure and nature of the gases present) in which the direct bonding is carried out. However, this is very restrictive because the atmosphere of the machines in which direct bonding between two substrates is achieved is generally not modifiable. In addition, modifying the conditions for implementing direct bonding also risks modifying the performance of the bonding performed.
    [0004] SUMMARY OF THE INVENTION An object of the present invention is to provide a process for direct bonding between at least two substrates which makes it possible to avoid the appearance of bonding defects due to the propagation of the bonding wave, and in which a contact between the two substrates can be carried out at room temperature and at ambient pressure, for example under the atmosphere of a clean room (comprising air at about 50% relative humidity at 21 ° C.) . For this, the invention proposes a method of direct bonding between at least a first and a second substrate, each of the first and second substrates comprising a first and a second main face, comprising at least the steps of: first thinning of the edges the first substrate on at least a portion of the circumference of the first substrate, at the first major face of the first substrate; contacting the second main face of the first substrate with the second main face of the second substrate such that a bonding wave propagates between the first and second substrates, solidifying the first and second substrates together by direct collage.
    [0005] The method according to the invention proposes to carry out, prior to contacting the substrates to be joined, a thinning of the edges of the first substrate on at least a part of the circumference of the first substrate. The fact that the edges of the first substrate are thinned makes it possible to make the first substrate less rigid at these edges. Thus, after the two substrates are brought into contact, when the bonding wave arrives at these edges, the first substrate has the capacity to deform slightly in order to avoid the formation of defects due to the adiabatic expansion occurring. during the passage of the bonding wave at the edges of the substrates. When the bonding wave is initiated from a localized initiation point at the edges of the first and second substrates, the at least a portion of the circumference of the first substrate may be at least one-third of the circumference of the first substrate. and can be located opposite the initiation point.
    [0006] The bonding wave can be initiated by applying mechanical pressure to at least one of the two substrates. Advantageously, the first thinning may be performed over the entire circumference of the first substrate. This configuration is advantageously achieved when the point of initiation of the bonding wave is located substantially at the centers of the substrates. The first thinning may be performed such that a difference between a minimum thickness of the thinned edges of the first substrate and an edge thickness of the second substrate is greater than or equal to about 25%, and that a minimum value among the minimum thickness thinned edges of the first substrate and the thickness of the edges of the second substrate is less than or equal to about 544 μm. Thus, besides the fact that the thinner edges of the thinned edges of the first substrate and the edges of the second substrate are less than or equal to about 544 μm, the minimum thickness of the thinned edges of the first substrate may be less than or equal to about 544 μm. equal to about 75% of the thickness of the edges of the second substrate, or the thickness of the edges of the second substrate may be less than or equal to about 75% of the minimum thickness of the thinned edges of the first substrate. The first thinning may be performed such that a width of the thinned edges of the first substrate is between about 1% and 25% of the diameter of the first substrate. The width corresponds to the dimension parallel to the diameter of the first substrate. The first thinning may be performed such that the thickness of the thinned edges of the first substrate is substantially constant, or such that the thickness of the thinned edges decreases on at least a portion of the width of the thinned edges, or such that the thickness thinned edges vary in a profile having at least two slopes. The method may further comprise, before contacting the second main face of the first substrate with the second main face of the second substrate, the implementation of a second thinning of at least a portion of the edges of the second substrate, at the first major face of the second substrate. The direct bonding solidarisant the first and second substrates 5 to one another may correspond to a hydrophilic direct bonding. The first and second substrates may each comprise a semiconductor, and the method may further comprise, before contacting the second main face of the first substrate with the second main face of the second substrate, the implementation of a oxidizing at least the second major face of at least one of the first and second substrates. The method may further comprise, between the first thinning and the bringing into contact of the second main face of the first substrate with the second main face of the second substrate, the implementation of a polishing of one end of the thinned edges of the first substrate.
    [0007] BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be better understood on reading the description of exemplary embodiments given purely by way of indication and in no way limiting, with reference to the appended drawings in which: FIGS. 1 and 2 represent the steps of FIG. a method of direct bonding between two substrates, object of the present invention, according to a particular embodiment; - Figures 3 and 4 show alternative embodiments of a thinning edges of a substrate used in a direct bonding process between two substrates, object of the present invention.
    [0008] Identical, similar or equivalent parts of the various figures described below bear the same numerical references so as to facilitate the passage from one figure to another.
    [0009] The different parts shown in the figures are not necessarily in a uniform scale, to make the figures more readable. The different possibilities (variants and embodiments) should be understood as not being exclusive of each other and can be combined with one another. DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS Referring first to FIGS. 1 and 2 which show the steps of a direct bonding process between a first substrate 100 and a second substrate 102 according to a particular embodiment. Each of the two substrates 100 and 102 corresponds here to a silicon substrate of crystalline orientation <001>, of diameter equal to 200 mm, of thickness equal to 725 μm, and of P doping with a resistivity of between approximately 1 Ohm / cm and 10 Ohm / cm. The first substrate 100 has a first main face 104 and a second main face 106. The second substrate 102 has a first main face 108 and a second main face 110. A thermal oxidation of the second substrate 102 is implemented to form around of it a thermal oxide layer 112, here based on SiO 2 because the second substrate 102 is a silicon substrate. This thermal oxidation is, for example, carried out at a temperature of about 950 ° C. under an oxygen atmosphere. The thermal oxide layer 112 has for example a thickness equal to about 50 nm. Thinning of the edges 114 of the first substrate 100 is then achieved, for example by lapping, and such that the thickness and edges 114 after thinning is less than or equal to about 75% of the initial thickness of the first substrate 100, c that is, less than or equal to about 544 μm in the case of a first substrate 100 with a thickness of 725 μm. In the exemplary embodiment described herein, the thickness and thinned edges 114 are about 500 μm. This thinning of the edges 114 of the first substrate 100 is made at the first main surface 104 of the first substrate 100. Moreover, this thinning is performed such that a width L1 of the thinned edges 114 is between about 1% and 25%. % of the diameter of the first substrate 100. In the embodiment described here, the width L1 is equal to about 10 mm. The thickness and edges 114 thinned is substantially constant over the entire width L1. This thinning here forms, at the edges 114 of the first main face 104 of the first substrate 100, a "step" of height equal to about 225 μm. Figure 1 shows the substrates 100 and 102 thus obtained. In the embodiment described here, the thinning of the edges 114 is made over the entire circumference of the first substrate 100.
    [0010] Alternatively, particularly when the bonding wave is intended to be initiated from a localized initiation point at the edges of the first and second substrates 100, 102, it is possible that this thinning is performed on only a part of the circumference of the first substrate 100, this portion corresponding to at least one third of the circumference of the first substrate 100 and 20 being located opposite the initiation point of the bonding wave which will be obtained later. The first and second substrates 100, 102 are then cleaned with a solution of sulfuric acid and hydrogen peroxide (with about 3 times more sulfuric acid than oxygenated water in the solution), also called SPM ( "Sulfuric Peroxide Mixture"), for a period of about 10 minutes, then rinsed with deionized water for about 10 minutes, and immersed in a solution of ammonia, hydrogen peroxide and deionized water (With respectively 1/1/5 in the solution), also called APM (Ammonium Peroxide Mixture), for about 9 minutes and at a temperature of about 70 ° C. A final rinse with deionized water is carried out. The faces 106 and 110 have a roughness compatible with the implementation of direct bonding, that is to say have a roughness less than or equal to about 0.5 nm. If the first substrate 100 and / or the second substrate 102 do not have a surface roughness compatible with the implementation of a direct bonding, planarization steps can be implemented beforehand in order to make the surfaces compatible with the implementation of a direct bonding. As shown in FIG. 2, contacting the second main face 106 of the first substrate 100 with the second main face 110 (here formed of semiconductor oxide) of the second substrate 102 is then performed. During this contacting, the second substrate 102 is placed on a support and the first substrate 100 is then deposited on the second substrate 102. A pressure can be applied at the center of the first main face 104 of the first substrate 100 in order to trigger the propagation of the bonding wave from the centers of the substrates 100, 102 to the edges of the substrates 100, 102. The fact that the edges 114 of the first substrate 100 are thinned makes it possible to make the first one less rigid. Substrate 100 at these edges 100. Thus, when the bonding wave arrives at these edges, the first substrate 100 may be deformed slightly to avoid the formation of defects due to the adiabatic expansion occurring during passing the bonding wave at the edges of the substrates 100, 102. This step of contacting the two substrates 100, 102 is carried out at ambient temperature and at ambient pressure, for example in clean room with air at about 21 ° C and about 50% relative humidity. The bonding energy is then reinforced by annealing the two bonded substrates 100, 102, for example at a temperature of 400 ° C. for 2 hours. In general, one or more heat treatments for reinforcing the adhesion forces between the substrates 100 and 102 may be made. When electronic components are present on at least one of these substrates 100, 102 (at the level of the first faces 104, 108), the temperatures of these heat treatments can be between about 200 ° C. and 400 ° C. If not, the heat treatment temperatures can be up to about 1100 ° C. Prior to bringing the substrates 100 and 102 into contact, it is possible to polish the end of the thinned edges 114 of the first substrate 100 in order to "round off" the profile of the thinned edges 114. This polishing can be achieved by etching. Such polishing also makes it possible to eliminate any hardened zones that could be a source of fragility for bonding. In the particular embodiment described above, the thickness e1 of the thinned edges 114 is less than or equal to about 75% of the initial thickness of the second substrate 102, the initial thicknesses of the first and second substrates 100, 102 being here substantially equal to each other and less than or equal to about 725 μm. When the initial thicknesses of the first and second substrates 100, 102 are greater than about 725 μm, the thinning of the edges 114 of the first substrate 100 is such that the thickness of the thinned edges 114 of the first substrate 100 is less than or equal to at about 544 μm. Thinning is performed such that the edges of at least one of the two substrates 100, 102 have a thickness less than or equal to about 544 μm, and that a difference between the thicknesses of the edges of the two substrates is from minus 25% relative to each other.
    [0011] In the particular embodiment described above, the thinning of the edges 114 of the first substrate 100 is made such that the thickness e1 of the thinned edges 114 of the first substrate 100 is substantially constant over the entire width L1 on which this thinning is achieved. . As a variant, this thinning of the edges 114 of the first substrate 100 can be realized such that the thickness variation created by this thinning is less abrupt. For example, the thinning may be performed such that the thickness of the thinned edges 114 decreases over at least a portion of the width L1 of the thinned edges 114. Edges 114 thus thinned are shown for example in FIG.
    [0012] To make such edges 114, a cutting saw is used to make saw cuts at the first face 104 of the first substrate 100. Because the depth of the saw cuts formed in the substrate 100 can be controlled, it is possible to make the edges 114 thinned with different profiles, according to the desired configuration. Such a saw may for example form a line 10 of width equal to about 1 mm. In the example of Figure 3, 10 lines are made successively such that the thinned edges have a width L1 equal to about 10 mm. Each stroke is made at a depth of 22.5 μm from the previous line so that the minimum thickness e1 of the thinned edges 114 at their end is about 500 μm (725 μm - 10 × 15 22 , 5 μm). According to another variant, the thinning may be performed such that the thickness of the thinned edges 114 varies according to a profile comprising at least two slopes. In the example of FIG. 4, the thickness of the thinned edges 114 varies according to a profile comprising two slopes, forming a "V" profile. Such a profile 20 is for example made by producing 10 saw cuts successively such that the thinned edges have a legal width of about 10 mm. Each line is made to a depth equal to 45 μm with respect to the preceding line so that the minimum thickness of the thinned edges 114, at the level of the middle of the thinned edges, is equal to approximately 500 μm (725 μm - 5 × 45 μm). .
    [0013] Other shapes or profiles for thinning the edges 114 may be envisaged. In addition, different running tools of a cutting saw can be used to thin the edges 114 of the first substrate 100.
    [0014] As a variant, it is also possible to produce, before the two substrates 100, 102 come into contact, a second thinning of the edges of the second substrate 102, at the level of the first main face 108 of the second substrate 102. The different variants previously described for the thinning of the edges of the first substrate 100 may be applied for this second thinning. This second thinning may be performed such that the thinned edges of at least one of the two substrates have a thickness less than or equal to about 544 μm, and that a difference between the thicknesses of the thinned edges of the two substrates is from minus 25% relative to each other. Alternatively, it is also possible to carry out, before contacting the two substrates 100, 102, an oxidation of the first substrate 100, replacing or in addition to the oxidation of the second substrate 102. In the examples previously described, the Direct bonding 15 achieved corresponds to a hydrophilic type bonding due to the hydrophilic nature of the solidarized materials. As a variant, the thinning of the edges of one or more solidified substrates may also be achieved in the case of direct hydrophobic bonding. This direct bonding method advantageously applies to the development of an SOI substrate, or the transfer of circuits for the manufacture of backlit imagers, or for 3D applications.
    权利要求:
    Claims (10)
    [0001]
    REVENDICATIONS1. A process for direct bonding between at least first and second substrates (100, 102), each of the first and second substrates (100, 102) having first and second major faces (104, 106, 108, 110) having least steps of: - first edge thinning (114) of the first substrate (100) on at least a portion of the circumference of the first substrate (100), at the first major face (104) of the first substrate (100) ; contacting the second main face (106) of the first substrate (100) with the second main face (110) of the second substrate (102) such that a bonding wave propagates between the first and second substrates (100, 102), solidarisant the first and second substrates (100, 102) to one another by direct bonding.
    [0002]
    The method of claim 1, wherein, when the sticking wave is initiated from a localized initiation point at the edges of the first and second substrates (100, 102), said at least a portion of the circumference of the first substrate (100) is at least one third of the circumference of the first substrate (100) and is located opposite the initiation point.
    [0003]
    3. Method according to one of the preceding claims, wherein the first thinning is performed on the entire circumference of the first substrate (100).
    [0004]
    4. Method according to one of the preceding claims, wherein the first thinning is performed such that a difference between a minimum thickness of the edges (114) thinned of the first substrate (100) and a thickness of edges of the second substrate ( 102) is greater than or equal to about 25%, and that a minimum value among the minimum thickness of the thinned edges (114) of the first substrate (100) and the thickness of the edges of the second substrate (102) is less than or equal to at about 544 μm. 5
    [0005]
    5. Method according to one of the preceding claims, wherein the first thinning is performed such that a width of the edges (114) thinned of the first substrate (100) is between about 1% and 25% of the diameter of the first substrate ( 100). 10
    [0006]
    6. Method according to one of the preceding claims, wherein the first thinning is performed such that the thickness of the edges (114) thinned of the first substrate (100) is substantially constant, or such that the thickness of the edges (114). Thinning decreases over at least a portion of the width of the thinned edges (114), or such that the thickness of the thinned edges (114) varies in a profile having at least two slopes.
    [0007]
    7. Method according to one of the preceding claims, further comprising, before contacting the second main face (106) of the first substrate (100) with the second main face (110) of the second substrate (102), performing a second thinning of at least a portion of edges of the second substrate (102) at the first major face (108) of the second substrate (102). 25
    [0008]
    8. Method according to one of the preceding claims, wherein the direct bonding solidarisant the first and second substrates (100, 102) to one another corresponds to a hydrophilic direct bonding. 3036223 15
    [0009]
    9. Method according to one of the preceding claims, wherein the first and second substrates (100, 102) each comprise a semiconductor, and further comprising, before contacting the second main face (106) of the first substrate ( 100) with the second main face (110) of the second substrate (102), carrying out an oxidation of at least the second main face (106, 110) of at least one of the first and second substrates (100, 102).
    [0010]
    10. Method according to one of the preceding claims, 10 further comprising, between the first thinning and the contacting of the second main face (106) of the first substrate (100) with the second main face (110) of the second substrate. (102), performing polishing of one end of the thinned edges (114) of the first substrate (100).
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    同族专利:
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    法律状态:
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    2016-11-18| PLSC| Publication of the preliminary search report|Effective date: 20161118 |
    2017-05-30| PLFP| Fee payment|Year of fee payment: 3 |
    2018-05-28| PLFP| Fee payment|Year of fee payment: 4 |
    2019-05-31| PLFP| Fee payment|Year of fee payment: 5 |
    2020-05-30| PLFP| Fee payment|Year of fee payment: 6 |
    2022-02-11| ST| Notification of lapse|Effective date: 20220105 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1554182A|FR3036223B1|2015-05-11|2015-05-11|PROCESS FOR DIRECTLY BONDING SUBSTRATES WITH SHIFTING THE EDGES OF AT LEAST ONE OF THE TWO SUBSTRATES|
    FR1554182|2015-05-11|FR1554182A| FR3036223B1|2015-05-11|2015-05-11|PROCESS FOR DIRECTLY BONDING SUBSTRATES WITH SHIFTING THE EDGES OF AT LEAST ONE OF THE TWO SUBSTRATES|
    PCT/EP2016/060448| WO2016180828A1|2015-05-11|2016-05-10|Method for direct bonding of substrates including thinning of the edges of at least one of the two substrates|
    EP16726799.6A| EP3295473B1|2015-05-11|2016-05-10|Method for direct bonding of substrates including thinning of the edges of at least one of the two substrates|
    US15/571,573| US10497609B2|2015-05-11|2016-05-10|Method for direct bonding of substrates including thinning of the edges of at least one of the two substrates|
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